Marie Krysak, Intel Corporation – Monday, April 21, 2014, 3:00pm, 212 Kearney
Investigation of metal-oxide based nanoparticle resists for EUV lithography
The semiconductor industry has been driven by Moore’s law, which states that the number of transistors on integrated circuits will double approximately every two years. A key factor in the continued scaling of transistors is the use of lithography to pattern various device features. The industry has consistently developed new lithographic exposure tools, using shorter wavelengths to achieve higher resolution patterns. One promising candidate for next-generation lithography and the extension of Moore’s Law is extreme ultraviolet lithography (EUVL). Resist materials innovation is required to enable the use of EUVL in production. This talk will focus on our efforts to assess metal oxide-based nanoparticles as novel EUV resists, and their potential advantages over organic-based chemically amplified resists. Spectroscopic techniques such as Nuclear Magnetic Resonance (NMR), Dynamic Light Scattering (DLS) and Fourier-transform Infrared Spectroscopy (FT-IR) were used to probe the patterning mechanism of these materials. Resist formulations have been evaluated using EUV exposures. These results and the mechanistic insights they provide will be discussed.
Dr. Krysak is currently a process engineer in the Components Research department at Intel Corporation. She is in the novel materials group, focusing on research areas essential to pushing the limits of innovation for the semiconductor industry. She received her bachelor’s degree in Chemistry in 2007 from Rochester institute of Technology, and her masters and PhD in Chemistry in 2012 from Cornell University.